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Product Detailed Parameters
- Description：MOSFET N-CH 40V 325A LFPAK88
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：325A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：137 nC @ 10 V
- Vgs (Max)：+20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：10322 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：375W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK88 (SOT1235)
- Package / Case：SOT-1235
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Overview
The BUK7S1R0-40HJ is an automotive qualified N-channel MOSFET utilizing Trench 9 superjunction technology in a copper-clip LFPAK88 package. It features a drain-source voltage of 40 V and a continuous drain current of 325 A at 25 °C mounting base temperature. The typical on-state resistance is 1 mΩ at 25 °C, rising to 2.2 mΩ at 175 °C junction temperature. Total power dissipation reaches 375 W under specified conditions. The device supports a peak pulsed drain current of 1659 A and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Fully automotive qualified beyond AEC-Q101 standards for high reliability
- LFPAK88 copper clip package provides low thermal resistance and improved current spreading
- Trench 9 superjunction technology enables lower on-resistance and enhanced avalanche capability
- Gull wing leads offer high board level reliability and visual AOI inspection compatibility
Applications
- 12 V automotive systems
- 48 V DC/DC systems (on 12 V secondary side)
- Higher power motors, lamps and solenoid control
- Reverse polarity protection
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix J against the manufacturer's official documentation to confirm exact packaging configuration. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure design margins account for the thermal resistance characteristics defined in the datasheet. Validate that the LFPAK88 footprint matches the recommended stencil thickness and solder land dimensions provided by Nexperia.
Selection Notes
Select this component for applications requiring high current handling in space-constrained automotive environments. The LFPAK88 package offers a smaller footprint compared to traditional wire bond packages like D²PAK while maintaining robust thermal performance. Consider the tight VGS(th) limits if paralleling multiple devices is required for current sharing. Evaluate the avalanche energy rating for circuits subject to inductive load switching.
Part Context
This part belongs to the BUK7S series of N-channel MOSFETs from Nexperia. It utilizes NextPowerS3 technology architecture optimized for automotive grade reliability. The LFPAK88 package variant is designed to replace older leaded packages in modern surface mount assembly lines. It represents a standard level gate drive solution suitable for direct interfacing with common automotive gate drivers.
Replacement Considerations
Direct pin-to-pin replacements within the same family include BUK7S1R0-40H. Verify package compatibility and electrical parameter equivalence before substitution.
