BUK7S2R0-40HJ

Overview

The BUK7S2R0-40HJ is an automotive qualified N-channel MOSFET utilizing Trench 9 low ohmic superjunction technology. It features a copper-clip LFPAK88 package designed for high power density and thermal efficiency in space-constrained applications. The device supports a drain-source voltage of 40 V, with a typical continuous drain current of 190 A at a mounting base temperature of 25 °C. Total power dissipation reaches 183 W under the same conditions. The on-state resistance (RDSon) is typically 1.7 mΩ at 25 °C junction temperature, rising to 3.55 mΩ at 175 °C. Gate charge is typically 50 nC, and thermal resistance from junction to mounting base is 0.72 K/W.

Feature Summary

• Fully automotive qualified to beyond AEC-Q101 standards, supporting operation in thermally demanding environments up to +175 °C.
• LFPAK88 package utilizes copper clip technology to improve current spreading, reduce RDSon, and lower thermal resistance compared to wire bond packages.
• Flexible gull wing leads enhance board level reliability by absorbing mechanical and thermal cycling stress, allowing visual AOI soldering inspection without x-ray equipment.
• Trench 9 superjunction technology provides reduced cell pitch for lower RDSon in the same footprint, along with improved safe operating area and avalanche capability.

Applications

• 12 V automotive systems
• 48 V DC/DC systems (on 12 V secondary side)
• Higher power motors, lamps and solenoid control
• Reverse polarity protection
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix 'J' against the official Nexperia datasheet or factory documentation to confirm packaging details such as reel size or tape width. Standard datasheets often list the base part number; ensure the suffix matches your required supply format. Confirm RoHS compliance and REACH SVHC status through the manufacturer's latest product change notification or certification documents before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high current handling in compact automotive footprints where thermal management is critical. The LFPAK88 package offers superior power density over legacy D²PAK styles. Ensure PCB thermal design accounts for the 183 W dissipation rating at 25 °C mounting base temperature. Verify that gate drive circuits can support the standard level requirements and that the 40 V breakdown voltage aligns with system rail voltages including transient spikes.

Part Context

This device belongs to Nexperia's BUK7S series of automotive-grade N-channel MOSFETs. It represents an evolution in superjunction technology tailored for high-power automotive electronics. The LFPAK88 package is specifically engineered to replace older wire-bonded solutions, offering better reliability and thermal performance for modern vehicle electrical architectures.

Replacement Considerations

Direct replacements within the same family include BUK7S1R5-40H, which offers a lower on-resistance of 1.5 mΩ in the identical LFPAK88 package. Designers should verify pinout compatibility and thermal characteristics when substituting parts. Cross-referencing with other 40 V superjunction devices requires careful evaluation of gate charge and thermal resistance differences.