BUK7V4R2-40HX

Overview

The BUK7V4R2-40HX is a dual N-channel MOSFET in an LFPAK56D (SOT1205) package, configured as a half-bridge switch. It utilizes Trench 9 technology and is qualified to AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 98 A at 25 °C mounting base temperature, and a typical on-state resistance of 4.2 mΩ at 25 °C. The device supports junction temperatures up to 175 °C with a total power dissipation of 85 W.

Feature Summary

• Internal connection between the high-side source and low-side drain enables compact half-bridge switching configurations.
• LFPAK copper clip packaging provides enhanced robustness, reliability, and optimized thermal performance.
• Advanced silicon technology delivers superior avalanche ruggedness and low power losses for high efficiency.
• Gull wing leads facilitate automated optical inspection and high manufacturability during assembly.

Applications

• 12 V automotive systems
• Powertrain, chassis, body, and infotainment applications
• Brushless or brushed DC motor drive
• DC-to-DC conversion systems
• LED lighting

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package variant and tape-and-reel specifications. Confirm compliance requirements such as RoHS and REACH status directly from the datasheet before procurement. Ensure that the intended application environment aligns with the specified automotive qualification standards.

Selection Notes

Select this component for designs requiring integrated half-bridge topology to minimize PCB footprint and layout complexity. Evaluate thermal management strategies based on the specified junction-to-mounting-base thermal resistance. Consider the repetitive avalanche rating when designing circuits subject to inductive load switching or transient voltage spikes.

Part Context

This device belongs to Nexperia's standard level MOSFET portfolio utilizing Trench 9 technology. It is specifically engineered for automotive environments, meeting AEC-Q101 grade requirements. The LFPAK56D package offers footprint compatibility with other dual packages while providing improved system-level thermal characteristics compared to traditional surface-mount options.

Replacement Considerations

Direct substitutes within the same family include BUK7Y2R5-40HX and BUK7J1R4-40HX. Verify pinout compatibility and electrical parameter alignment, particularly regarding on-state resistance and current handling capabilities, before implementing any cross-model replacements.

FAQ

What is the internal configuration of the dual MOSFET?

The device features an internal connection between the source of the high-side FET and the drain of the low-side FET, creating a dedicated half-bridge configuration.

Is the device suitable for automotive applications?

Yes, the product has been designed and qualified to AEC-Q101 standards for use in automotive electronics.

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to 175 °C.