BUK7Y08-40B,115

Description：MOSFET N-CH 40V 75A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a51652b10229 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 75A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：36.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2040 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：105W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK7Y08-40B,115

Overview

The BUK7Y08-40B,115 is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Nexperia High-Performance Automotive TrenchMOS technology. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 68 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 105 W at 25 °C. It supports junction temperatures up to 175 °C and includes non-repetitive avalanche energy capability of 146 mJ.

Feature Summary

Qualified for automotive critical applications in compliance with the AEC-Q101 standard.
Designed for operation in thermally demanding environments with a maximum junction temperature rating of 175 °C.
Optimized for compatibility with standard level gate drive sources.

Applications

12 V load switching
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Evaluate thermal management requirements against the 105 W total power dissipation limit at 25 °C mounting base temperature. Ensure gate drive circuits provide sufficient voltage to achieve the specified low on-state resistance. Consider the package's thermal resistance characteristics when designing heat sinking solutions for high-current continuous operation scenarios.

Part Context

This component belongs to the BUK7Y series of N-channel TrenchMOS FETs manufactured by Nexperia. These devices are engineered using advanced trench technology to deliver high performance within compact surface-mounted packages. The series targets robust power switching applications requiring reliability under varying thermal conditions.

Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations, electrical ratings, and package dimensions before implementation.