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Product Detailed Parameters
- Description：MOSFET N-CH 100V 85A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5067 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：238W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y12-100EX is an N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power-SO8) SOT669 package. It features a drain-source voltage of 100 V and a continuous drain current of 85 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 12 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 238 W under specified conditions. Junction temperature ranges from -55 °C to +175 °C, with a thermal resistance from junction to mounting base of 0.63 K/W.
Feature Summary
- Qualified to AEC-Q101 standard for high-performance automotive applications
- Rated for repetitive avalanche energy operation
- Maintains true standard level gate threshold above 1 V at 175 °C
Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging configuration and marking codes. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the component version matches the required production data sheet specifications for the intended design lifecycle.
Selection Notes
Select this component for designs requiring robust automotive-grade reliability and high current handling capabilities within a thermally efficient surface-mount footprint. The low on-state resistance supports efficient power switching in demanding environments. Evaluate the thermal management requirements based on the specified junction-to-mounting base thermal resistance for optimal heat dissipation.
Part Context
This part belongs to Nexperia's TrenchMOS family of standard level N-channel MOSFETs. It is specifically engineered for automotive electronics where durability under extreme thermal conditions is critical. The LFPAK56 package provides enhanced thermal performance compared to traditional plastic packages, supporting higher power densities in compact layouts.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout compatibility and electrical parameters such as RDS(on) and VDS before considering any substitute components.
