BUK7Y12-55B,115

$1.33

Description：MOSFET N-CH 55V 61.8A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:48f1f4781ab7 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 61.8A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：61.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：35.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2067 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：105W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

Download product information

BUK7Y12-55B,115

Overview

The BUK7Y12-55B,115 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) utilizing Nexperia High-Performance Automotive (HPA) TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 61.8 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 12 mΩ at VGS = 10 V and ID = 20 A. Total power dissipation reaches 105 W at 25 °C. It supports junction temperatures up to 175 °C and includes non-repetitive avalanche energy capability of 129 mJ.

Feature Summary

Compliant with AEC-Q101 automotive qualification standards for critical applications.
Designed for compatibility with standard level gate drive sources.
Capable of operation in thermally demanding environments with a 175 °C rating.

Applications

12 V and 24 V loads
Advanced braking systems (ABS)
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when an automotive-grade N-channel MOSFET is required for high-current switching applications. The LFPAK package provides efficient thermal management through a direct-connected mounting base. Ensure the gate drive circuitry aligns with standard level requirements rather than logic level specifications.

Part Context

This part belongs to the BUK7Y series of N-channel TrenchMOS FETs designed for automotive use. It utilizes HPA technology to deliver robust performance in harsh environments. The SOT669 (LFPAK) package integrates multiple source pins and a large exposed drain pad to minimize thermal resistance and support high power dissipation needs.