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Product Detailed Parameters
- Description：MOSFET N-CH 40V 58A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1311 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：85W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y13-40B,115 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing Nexperia High-Performance Automotive TrenchMOS technology. It features a drain-source voltage of 40 V and a continuous drain current of 58 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 13 mΩ at 25 °C and 25 mΩ at 175 °C. Total power dissipation reaches 85 W at 25 °C. It operates within a junction temperature range of -55 °C to 175 °C and includes an integrated source-drain diode with a reverse recovery time of 41 ns.
Feature Summary
- Qualified for automotive critical applications in accordance with AEC standards.
- Rated for operation in thermally demanding environments up to 175 °C junction temperature.
- Compatible with standard level gate drive sources for simplified circuit design.
Applications
- 12 V loads
- Air bag systems
- Automotive ABS systems
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring robust performance in automotive environments. The 175 °C rating allows for reliable operation under high thermal stress conditions common in engine compartments. Ensure gate drive circuits are compatible with standard level thresholds to fully leverage the low on-state resistance characteristics provided by the TrenchMOS technology.
Part Context
This part belongs to the BUK7Y series of N-channel TrenchMOS standard level FETs manufactured by Nexperia. These devices are engineered using advanced silicon planar technology to deliver high current handling capabilities within compact surface-mounted packages. The series is specifically optimized for automotive reliability and efficiency requirements.
Replacement Considerations
Direct substitutes include other Nexperia parts within the BUK7Y family sharing the SOT669 package and similar electrical ratings, such as the BUK7Y12-40EX or BUK7Y07-30B, provided voltage and current specifications align with the application requirements.
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The maximum non-repetitive drain-source avalanche energy (EDS(AL)S) is 85 mJ when tested at ID = 58 A, Vsup ≤ 40 V, RGS = 50 Ω, VGS = 10 V, and initial junction temperature of 25 °C.
How does the on-state resistance vary with temperature?
The drain-source on-state resistance increases with temperature. It is specified as a maximum of 13 mΩ at 25 °C and rises to a maximum of 25 mΩ at 175 °C junction temperature under identical test conditions.
