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Product Detailed Parameters
- Description：MOSFET N-CH 80V 65A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：44.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3155 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：147W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y14-80EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power-SO8) package. It features a drain-source voltage of 80 V and a continuous drain current of 65 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 14 mΩ at VGS = 10 V and ID = 15 A. Total power dissipation reaches 147 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with AEC-Q101 automotive standards for high-performance applications
- Rated for repetitive avalanche energy operation
- Maintains true standard level gate threshold above 1 V at 175 °C
- Designed for thermally demanding environments with 175 °C junction rating
Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Confirm that the component meets all required automotive qualification standards for the intended application environment. Ensure thermal management designs align with the specified junction temperature limits and power dissipation ratings provided in the datasheet.
Selection Notes
Select this component for automotive circuits requiring robust N-channel switching with low on-resistance. The LFPAK56 package offers efficient thermal transfer suitable for high-current loads. Verify that the gate drive voltage supports the standard level threshold characteristics across the full operating temperature range to ensure reliable conduction.
Part Context
This part belongs to the Nexperia BUK7Y series of N-channel MOSFETs designed for automotive use. The series employs TrenchMOS technology to achieve low RDS(on) within compact surface-mount packages. These devices are engineered to meet stringent automotive reliability requirements while providing high power density for vehicle electrical systems.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout compatibility and thermal resistance values when considering equivalent components from other manufacturers.
