BUK7Y18-55B,115

$0.82

Description：MOSFET N-CH 55V 47.4A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:84a1c8a67464 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 47.4A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：47.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：21.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1263 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：85W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK7Y18-55B,115

Overview

The BUK7Y18-55B,115 is an N-channel enhancement mode Field-Effect Transistor utilizing Nexperia's High-Performance Automotive TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 47.4 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 18 mΩ at VGS = 10 V and ID = 20 A. Total power dissipation reaches 85 W at 25 °C. It supports junction temperatures up to 175 °C and includes non-repetitive avalanche energy capability of 77 mJ.

Feature Summary

Compliant with AEC-Q101 automotive qualification standards for critical applications.
Compatible with standard level gate drive sources for simplified circuit design.
Engineered for thermally demanding environments with a 175 °C operating rating.

Applications

12 V and 24 V loads
Advanced braking systems (ABS)
Automotive systems
Engine management
General purpose power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring robust automotive-grade N-channel switching with standard logic-level gate drive compatibility. Ensure thermal management strategies account for the 176 K/W junction-to-mounting-base thermal resistance to maintain safe operating temperatures under load conditions.

Part Context

This part belongs to the BUK7Y series of N-channel TrenchMOS standard level FETs manufactured by Nexperia. These devices are specifically engineered for high-performance automotive applications, combining low conduction losses with high reliability standards required in modern vehicle electronics.

Replacement Considerations

Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute based solely on pinout or generic electrical similarities without confirming package dimensions and thermal characteristics match the original design requirements.