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Product Detailed Parameters
- Description：MOSFET N-CH 75V 49A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2173 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：105W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y18-75B,115 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing Nexperia High-Performance Automotive TrenchMOS technology. It features a drain-source voltage of 75 V and a continuous drain current of 49 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 13.8 mΩ at VGS = 10 V and ID = 20 A. Total power dissipation reaches 105 W under specified conditions. The component supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy ratings of 118 mJ.
Feature Summary
- Qualified for automotive critical applications in compliance with AEC-Q101 standards.
- Compatible with standard level gate drive sources for simplified circuit design.
- Engineered for thermally demanding environments with an extended 175 °C operating rating.
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- DC-to-DC converters
- Engine management
- Transmission control
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring robust automotive-grade switching capabilities within a 75 V system. The LFPAK56 package provides efficient thermal management through the mounting base connection. Ensure gate drive voltages align with the standard level requirements to optimize conduction losses and switching performance.
Part Context
This device belongs to the BUK7Y series of N-channel TrenchMOS FETs designed by Nexperia. The series utilizes High-Performance Automotive technology to deliver reliability in harsh environments. The SOT669 (LFPAK56) package is common across multiple variants in this family, offering a standardized footprint for various voltage and current ratings.
Replacement Considerations
Direct substitutes include other BUK7Y18 variants with different voltage ratings or package options, such as BUK7Y18-55B or BUK7Y18-40E, provided electrical parameters meet application requirements. Cross-reference datasheets for pin compatibility and thermal characteristics before substitution.
