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The BUK7Y1R4-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 low ohmic superjunction technology within a robust LFPAK56 (SOT669) package. It meets AEC-Q101 requirements for high performance and endurance. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 190 A at 25 °C mounting base temperature, and a maximum on-state resistance of 1.4 mΩ at 25 °C. The device supports a total power dissipation of 395 W under specified conditions and operates across a junction temperature range of -55 °C to +175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets all required AEC-Q101 qualification standards for the intended automotive application. Cross-reference the marking code 71H440 with the datasheet to authenticate the part number and manufacturing date code upon receipt.
Select this component for designs requiring high current handling in compact footprints due to its low on-state resistance. Ensure the PCB thermal design can support the 190 A continuous current demonstration, as practical limits depend on mounting base temperature. Verify gate drive compatibility with the specified threshold voltage limits to facilitate easy paralleling if higher current capacity is needed.
This device belongs to Nexperia's BUK7Y series of standard level N-channel MOSFETs designed for automotive use. It employs Trench 9 superjunction technology to achieve superior efficiency and ruggedness. The LFPAK56 package integrates copper clip technology for enhanced thermal and electrical performance compared to traditional plastic packages.
BUK7Y1R4-40H