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Product Detailed Parameters
- Description：MOSFET N-CH 40V 120A LFPAK56
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：96 nC @ 10 V
- Vgs (Max)：+20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：6142 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：294W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y1R7-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 superjunction technology, housed in a robust LFPAK56 (Power-SO8) package. It features a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 1.7 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 294 W under specified conditions. The component supports junction temperatures up to 175 °C and includes a mounting base connected to the drain for efficient thermal management.
Feature Summary
- Fully automotive qualified to AEC-Q101 standards with a 175 °C rating suitable for thermally demanding environments
- Trench 9 Superjunction technology provides enhanced power density, lower RDSon, improved SOA, and avalanche capability
- LFPAK Gull Wing leads ensure high board level reliability by absorbing mechanical stress during thermal cycling
- LFPAK copper clip technology improves reliability, reduces thermal resistance, and increases maximum current capability
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix 'HX' against the manufacturer's official documentation to confirm packaging details such as reel size or tape configuration. Ensure that the procurement channel sources genuine Nexperia products to maintain AEC-Q101 qualification integrity. Cross-reference the full part number with the latest datasheet revision to confirm compatibility with current manufacturing processes and marking codes.
Selection Notes
Select this component for designs requiring low conduction losses and high current handling within a compact surface-mount footprint. The standard level gate drive compatibility simplifies driver circuit design. Consider the thermal resistance characteristics and the necessity of connecting the mounting base to the drain for optimal heat dissipation in high-power automotive applications.
Part Context
This device belongs to the BUK7Y series of N-channel MOSFETs from Nexperia, designed specifically for automotive critical applications. It leverages High-Performance Automotive (HPA) TrenchMOS technology to deliver superior electrical performance compared to standard TrenchMOS devices. The LFPAK56 package offers a balance of thermal efficiency and mechanical robustness for PCB-mounted implementations.
Replacement Considerations
Direct substitutes within the same family include BUK7Y1R4-40HX, which offers a lower on-state resistance of 1.4 mΩ but requires verification of pinout and package compatibility.
