BUK7Y20-30B,115

$0.28

Description：NEXPERIA BUK7Y20 - N-CHANNEL TRE
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:63d2977cc426 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：NEXPERIA BUK7Y20 - N-CHANNEL TRE
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：39.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：20mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：11.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：688 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：59W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK7Y20-30B,115

Overview

The BUK7Y20-30B is a standard level N-channel enhancement mode Field-Effect Transistor (FET) utilizing Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. It is housed in an LFPAK plastic package (SOT669). The device is designed and qualified to AEC-Q101 standards for automotive critical applications. Key electrical parameters include a drain-source voltage of 30 V, a continuous drain current of 39.5 A at 25 °C mounting base temperature, and a total power dissipation of 59 W. The maximum on-state resistance is 20 mΩ at 25 °C junction temperature. It supports a junction temperature up to 175 °C.

Feature Summary

Compliant with AEC-Q101 qualification standards for automotive reliability.
Compatible with standard level gate drive sources.
Capable of operation in thermally demanding environments due to a 175 °C rating.

Applications

12 V Loads
Automotive systems
General purpose power switch
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape-and-reel specifications. Confirm that the component status remains active production rather than obsolete or limited availability. Ensure design compliance with the absolute maximum ratings provided in the datasheet, particularly regarding thermal management and avalanche energy limits.

Selection Notes

Select this component for circuits requiring robust automotive-grade N-channel switching with high current capability. The LFPAK package offers low thermal resistance suitable for power applications. Verify that the required gate drive voltage aligns with the standard level specification. Consider the 30 V breakdown voltage when designing for 12 V automotive systems to ensure adequate safety margins under transient conditions.

Part Context

This part belongs to the Nexperia BUK7Y series of N-channel TrenchMOS FETs. These devices are engineered using HPA technology specifically for automotive environments. The series provides a balance of low on-resistance and high current handling within compact surface-mount packages, targeting reliability requirements defined by automotive industry standards.

Replacement Considerations

Consult official Nexperia cross-reference guides for verified substitutes. Ensure any replacement matches the SOT669 package dimensions and pinout configuration. Verify that alternative components meet the same AEC-Q101 qualification level and thermal performance characteristics.