BUK7Y22-100EX

Overview

The BUK7Y22-100EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 100 V and a continuous drain current of 49 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 22 mΩ at 25 °C and 61 mΩ at 175 °C junction temperature. Total power dissipation reaches 147 W under specified conditions. Thermal resistance from junction to mounting base is 1.02 K/W. Gate-source threshold voltage ranges from 1 V to 4 V depending on temperature.

Feature Summary

• Qualified for high-performance automotive applications in compliance with the AEC-Q101 standard.
• Capable of operation in thermally demanding environments with a maximum junction temperature rating of 175 °C.
• Features true standard level gate drive characteristics, maintaining a threshold voltage greater than 1 V even at elevated temperatures.
• Rated for repetitive avalanche energy to withstand transient electrical stress.

Applications

• 12 V, 24 V, and 48 V automotive systems
• Motor, lamp, and solenoid control circuits
• Transmission control modules
• Ultra-high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target application. Cross-reference the marking code '72210E' with the datasheet to authenticate the part upon receipt. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance.

Selection Notes

Select this component when designing circuits requiring robust automotive-grade reliability and high current handling capabilities. The LFPAK56 package offers efficient heat dissipation suitable for dense PCB layouts. Consider the 175 °C operating limit for applications involving significant thermal loads or restricted airflow. Verify that the gate drive voltage aligns with the standard level requirements to ensure optimal on-state resistance performance.

Part Context

This device belongs to Nexperia's portfolio of N-channel TrenchMOS power MOSFETs designed for automotive use. It utilizes advanced trench gate technology to achieve low on-state resistance within a compact surface-mount package. The product line is engineered to meet stringent automotive quality standards while providing reliable performance in harsh electrical and thermal environments typical of modern vehicle electronics.

Replacement Considerations

Consult the official Nexperia replacement guide for verified cross-reference part numbers. Ensure any substitute maintains identical pinout configuration, package dimensions, and AEC-Q101 qualification status. Verify that alternative devices meet or exceed the original 100 V breakdown voltage and 49 A current ratings.

FAQ

What is the maximum junction temperature for the BUK7Y22-100EX?

The maximum junction temperature is 175 °C, allowing operation in thermally demanding environments.

Is the BUK7Y22-100EX qualified for automotive applications?

Yes, the device is designed and qualified to the AEC-Q101 standard for use in high-performance automotive applications.

How does the gate-source threshold voltage behave at high temperatures?

The device features a true standard level gate with a VGS(th) rating of greater than 1 V at 175 °C.