BUK7Y25-40B/C,115

Description：MOSFET N-CH 40V 35.3A LFPAK56
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)

SKU:bd93fc96a89e Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 35.3A LFPAK56
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：12.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：693 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：59.4W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK7Y25-40B/C,115

Overview

The BUK7Y25-40B/C,115 is an N-channel TrenchMOS standard level FET utilizing Nexperia High-Performance Automotive technology. It features a drain-source voltage of 40 V and a continuous drain current of 35.3 A at 25 °C mounting base temperature. The device supports a total power dissipation of 59.4 W and operates with a junction temperature up to 175 °C. Its on-state resistance is 25 mΩ at 25 °C and 47.5 mΩ at 175 °C. The component includes a non-repetitive avalanche energy rating of 37 mJ and is housed in an LFPAK (SOT669) package.

Feature Summary

Qualified for automotive critical applications per AEC Q101 standards
Compatible with standard level gate drive sources
Designed for thermally demanding environments with a 175 °C rating

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and tape-and-reel specifications. Confirm that the component status remains active or qualified for production use before initiating design-in processes. Cross-reference the latest datasheet revision to ensure all electrical parameters align with current manufacturing standards.

Selection Notes

Select this component for circuits requiring robust performance in automotive environments. Ensure the gate drive source matches the standard level requirements specified in the datasheet. Evaluate thermal management strategies to maintain the mounting base temperature within limits that support the required continuous drain current and power dissipation capabilities.

Part Context

This part belongs to the BUK7Y series of N-channel enhancement mode Field-Effect Transistors. It utilizes TrenchMOS technology optimized for high-performance automotive applications. The device is designed to provide reliable switching capabilities in demanding electrical and thermal conditions typical of modern vehicle electronics.