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The BUK7Y25-60EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 60 V and a continuous drain current of 34 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 25 mΩ at 10 V gate drive. Total power dissipation reaches 64 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required automotive qualification standards for the intended application environment. Cross-reference the datasheet revision date to ensure compatibility with current design constraints and regulatory requirements.
Select this component for designs requiring robust automotive-grade reliability and high thermal stability. The standard level gate drive simplifies driver circuit complexity while maintaining efficient switching performance. Evaluate the thermal resistance from junction to mounting base to ensure adequate heat sinking for the expected power dissipation levels in the target application.
This part belongs to Nexperia's BUK7Y series of N-channel MOSFETs, specifically designed using TrenchMOS technology. The series targets high-performance automotive applications where compliance with AEC Q101 standards is mandatory. The LFPAK56 package provides a compact solution with enhanced thermal performance compared to traditional plastic packages.
Direct substitutes within the same family include BUK7Y20-60E and BUK7Y15-60E, which offer lower on-resistance values but may have different current ratings. Verify pinout compatibility and thermal characteristics when considering alternative parts from other manufacturers.