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Product Detailed Parameters
- Description：MOSFET N-CH 80V 39A LFPAK56
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：25.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：95W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y25-80E/GFX is a single N-channel enhancement mode MOSFET manufactured by Nexperia. It utilizes TrenchMOS technology and is housed in an LFPAK56 (SOT669) surface-mount package. The device features a drain-source breakdown voltage of 80 V and a continuous drain current rating of 39 A at 25 °C. Its maximum on-resistance is specified at 16.7 mΩ. The component supports a gate-source voltage range of ±20 V and operates within a junction temperature range of -55 °C to +175 °C, with a power dissipation capacity of 95 W.
Feature Summary
- Utilizes TrenchMOS technology for low on-resistance performance
- Designed for high-density surface-mount applications via LFPAK56 packaging
- Capable of operating at elevated junction temperatures up to 175 °C
Applications
- DC-DC converter circuits
- Motor control systems
- Load switching applications
Procurement Notes
Verify the specific suffix 'GFX' against official Nexperia documentation to confirm it denotes the standard reel packaging variant rather than a distinct electrical specification. Ensure the ordering part number matches the required tape-and-reel quantity and that the component meets RoHS compliance standards for the intended manufacturing process.
Selection Notes
Select this component when a single N-channel MOSFET with 80 V capability and low thermal resistance is required. The LFPAK56 package offers superior heat dissipation compared to smaller SMD packages. Verify that the 39 A current rating and 16.7 mΩ on-resistance align with the system's peak load and efficiency requirements.
Part Context
This component belongs to the BUK7Y series of TrenchMOS logic level FETs from Nexperia. These devices are engineered for general-purpose power switching applications requiring high reliability and efficient thermal management in compact form factors.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference parameters such as Rds(on), Vgs(th), and package dimensions before considering alternative manufacturers.
