BUK7Y28-75B,115

$1.38

Description：MOSFET N-CH 75V 35.5A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:451e1b6fddef Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 35.5A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：35.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：28mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：21.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1417 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：85W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK7Y28-75B,115

Overview

The BUK7Y28-75B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing Nexperia's High-Performance Automotive TrenchMOS technology. It features a drain-source voltage of 75 V and a continuous drain current of 35.5 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 28 mΩ at VGS = 10 V and ID = 15 A. Total power dissipation reaches 85 W, with an operating junction temperature range up to 175 °C. It includes a built-in source-drain diode and supports non-repetitive avalanche energy of 75 mJ.

Feature Summary

Qualified for automotive critical applications in compliance with AEC-Q101 standards.
Compatible with standard level gate drive sources for simplified circuit design.
Engineered for thermally demanding environments with a 175 °C junction temperature rating.

Applications

12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
Engine management
Solenoid drivers

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the component matches the SOT669 (LFPAK) outline dimensions for PCB footprint compatibility. Validate that the intended application falls within the specified absolute maximum ratings to prevent device failure.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability and high thermal performance. The standard level gate drive compatibility simplifies driver selection compared to logic-level alternatives. Consider the low on-state resistance for minimizing conduction losses in high-current paths. Verify that the 75 V breakdown voltage provides adequate headroom for the target system voltage.

Part Context

This part belongs to the BUK7Y series of N-channel TrenchMOS FETs designed for automotive use. It utilizes HPA TrenchMOS technology to achieve low resistance and high ruggedness. The LFPAK package offers superior thermal dissipation compared to traditional plastic packages. It serves as a general-purpose power switch for various vehicle electrical systems.

Replacement Considerations

Check datasheets for alternative parts with matching VDS, ID, and RDS(on) values. Ensure any substitute also meets AEC-Q101 requirements if used in automotive contexts. Verify pinout compatibility, specifically the mounting base connection to the drain in the LFPAK package.