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Product Detailed Parameters
- Description：MOSFET N-CH 40V 120A LFPAK56
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：90.5 nC @ 10 V
- Vgs (Max)：+20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：5450 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：217W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y2R0-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 superjunction technology in a LFPAK56 (SOT669) package. It features a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The typical on-state resistance is 1.53 mΩ at 25 °C, rising to 3.24 mΩ at 175 °C. Total power dissipation reaches 217 W under specified conditions. The device supports junction temperatures up to 175 °C and includes a source-drain diode with a recovered charge of 21 nC.
Feature Summary
- Fully automotive qualified to AEC-Q101 standards for high performance and endurance.
- Trench 9 Superjunction technology provides enhanced power density and improved safe operating area compared to standard TrenchMOS.
- LFPAK Gull Wing leads absorb mechanical stress during thermal cycling, ensuring high board level reliability.
- LFPAK copper clip technology reduces thermal resistance and increases maximum current capability.
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration, such as reel or cut tape specifications. Confirm compliance with RoHS and REACH regulations by checking the chemical content data provided in the datasheet. Ensure the component status matches the required production phase before finalizing procurement orders.
Selection Notes
Select this component for designs requiring low conduction losses and high current handling within a compact surface-mount footprint. The tight gate-source threshold voltage limits facilitate easy paralleling of multiple devices. Consider the thermal resistance characteristics and the robustness of the LFPAK56 package for thermally demanding environments.
Part Context
This part belongs to Nexperia's standard level N-channel MOSFET portfolio designed for automotive applications. It utilizes the LFPAK56 package, also known as Power-SO8, which integrates a copper clip for superior thermal and electrical performance. The device is optimized for battery-operated power tools and general power switching tasks.
Replacement Considerations
Consult the official Nexperia replacement guide for verified substitute part numbers. Do not assume compatibility based solely on similar voltage or current ratings without verifying pinout and thermal characteristics.
FAQ
What technology is used in the BUK7Y2R0-40HX?
It uses Trench 9 low ohmic superjunction technology, which offers reduced cell pitch for enhanced power density and efficiency.
Is the BUK7Y2R0-40HX suitable for automotive applications?
Yes, it is fully automotive qualified to meet AEC-Q101 requirements.
How does the LFPAK56 package improve reliability?
The LFPAK Gull Wing leads absorb mechanical stress during thermal cycling, unlike traditional QFN packages, and allow for visual AOI soldering inspection.
