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The Nexperia BUK7Y3R0-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 superjunction technology in a LFPAK56 (SOT669) package. It features a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The typical on-state resistance is 3 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 172 W under specified conditions, with a junction temperature range from -55 °C to +175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your intended automotive application. Ensure compatibility with the LFPAK56 footprint dimensions provided in the datasheet before finalizing procurement orders.
Select this component for designs requiring low on-state resistance within a compact surface-mount footprint. The tight gate-source threshold voltage limits facilitate easy paralleling of multiple devices for higher current handling. Consider the 175 °C junction temperature rating for operation in thermally demanding environments where standard components may fail.
This device belongs to the Nexperia BUK7Y series of automotive-grade N-channel MOSFETs. It utilizes advanced Trench 9 superjunction technology to achieve lower RDSon values within the same physical footprint as previous generations. The LFPAK56 package offers superior thermal performance and mechanical robustness compared to traditional QFN packages.
BUK7Y3R5-40HX
It uses Trench 9 low ohmic superjunction technology, which reduces cell pitch to enhance power density and efficiency.
Yes, the LFPAK package allows for visual AOI soldering inspection without the need for expensive x-ray equipment.