SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BUK7Y41-80EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) SMD package. It features a drain-source voltage of 80 V and a continuous drain current of 25 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 41 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 64 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix 'EX' against the manufacturer's official documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the component version matches the required production status and that all electrical parameters align with the target application's thermal and voltage constraints before finalizing procurement.
Select this component for designs requiring AEC Q101 compliance and robust thermal performance in automotive contexts. The LFPAK56 package offers efficient heat dissipation suitable for mounting base temperatures up to 100 °C. Consider the 41 mΩ on-state resistance and 80 V breakdown voltage when evaluating efficiency and safety margins for 12 V, 24 V, or 48 V system architectures.
This part belongs to Nexperia's BUK7Y series of N-channel MOSFETs, which are engineered using TrenchMOS technology. The series is specifically designed to meet the rigorous demands of automotive electronics, providing reliable switching performance in compact surface-mount packages while maintaining compatibility with standard logic-level gate drive voltages.
Direct substitutes include other Nexperia parts within the BUK7Y series sharing the LFPAK56 package and similar electrical ratings, such as the BUK7Y20-30B for lower voltage applications. Verify pinout compatibility and thermal resistance characteristics when considering alternative manufacturers' equivalents.