ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2781 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：147W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
Download product information
Overview
The BUK7Y4R4-40EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in a surface-mounted LFPAK56 (Power-SO8) package. It features a drain-source voltage rating of 40 V and a continuous drain current capability of 100 A at a mounting base temperature of 25 °C. The device exhibits a typical on-state resistance of 3.3 mΩ at 25 °C, rising to a maximum of 4.4 mΩ under specified conditions. Total power dissipation reaches 147 W at 25 °C. The component supports junction temperatures up to 175 °C and includes a thermally enhanced mounting base connected directly to the drain.
Feature Summary
- Qualified to AEC-Q101 standards for high-performance automotive applications
- Rated for repetitive avalanche energy operation
- Maintains true standard level gate threshold voltage exceeding 1 V at elevated temperatures
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific suffix 'EX' against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the ordering code matches the exact thermal and electrical requirements defined in the product data sheet. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing procurement orders.
Selection Notes
Select this component for designs requiring robust automotive-grade reliability and high current handling within a compact footprint. The LFPAK56 package provides superior thermal performance compared to traditional plastic packages. Evaluate the gate charge characteristics against driver capabilities to ensure efficient switching speeds in power conversion circuits.
Part Context
This device belongs to the Nexperia BUK7Y series of N-channel MOSFETs designed for low-voltage, high-current applications. The series leverages advanced TrenchMOS technology to minimize conduction losses while maintaining high breakdown voltage ratings. These components are engineered specifically for the demanding thermal and electrical environments found in modern automotive electronics.
Replacement Considerations
Cross-reference with other Nexperia BUK7Y variants such as BUK7Y29-40EX or BUK9Y4R4-40E if different current or resistance profiles are required. Verify pinout compatibility and thermal resistance values when substituting devices from other manufacturers to ensure circuit integrity.
