BUK7Y54-75B,115

$0.71

Description：MOSFET N-CH 75V 21.4A LFPAK56
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:20d6405ac3fd Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 21.4A LFPAK56
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：21.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：54mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：803 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：59W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK7Y54-75B,115

Overview

The BUK7Y54-75B is an N-channel TrenchMOS standard level FET designed for automotive critical applications. It features a drain-source voltage of 75 V and a continuous drain current of 21.4 A at 25 °C mounting base temperature. The device supports a total power dissipation of 59 W and operates with a junction temperature up to 175 °C. Key electrical parameters include a maximum on-state resistance of 54 mΩ at 25 °C and non-repetitive avalanche energy capability of 33 mJ. The component utilizes the LFPAK (SOT669) surface-mounted package.

Feature Summary

Qualified to AEC-Q101 standards for automotive reliability
Supports standard level gate drive sources
Rated for thermally demanding environments with 175 °C junction temperature

Applications

12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
General purpose power switching
Solenoid drivers

Procurement Notes

Verify the manufacturer status carefully as the original NXP Standard Product business was transferred to Nexperia in February 2017. Confirm that the specific datasheet revision matches your design requirements, noting that product data sheets may contain references to the former entity. Ensure compatibility with the SOT669 package outline during PCB layout and thermal management planning.

Selection Notes

Select this component for designs requiring robust automotive-grade performance with high thermal tolerance. The 75 V rating and low on-state resistance make it suitable for efficient power switching in vehicle electronics. Consider the LFPAK package for its superior thermal dissipation capabilities compared to traditional packages, ensuring adequate heat sinking for sustained operation near the 175 °C limit.

Part Context

This part belongs to the N-channel TrenchMOS family utilizing High-Performance Automotive technology. It is engineered specifically for the automotive sector, offering enhanced ruggedness and reliability under harsh operating conditions. The series emphasizes standard level gate drive compatibility, simplifying integration into existing control architectures without requiring complex driver circuits.