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Product Detailed Parameters
- Description：MOSFET N-CH 60V 87A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3159 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：147W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y8R7-60EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 60 V and a maximum on-state resistance of 8.7 mΩ at 25 °C. The device supports a continuous drain current of 87 A at a mounting base temperature of 25 °C, with a total power dissipation rating of 147 W under the same conditions. It operates within a junction temperature range of -55 °C to +175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified for high-performance automotive applications in compliance with the AEC-Q101 standard.
- Capable of operation in thermally demanding environments due to a 175 °C junction temperature rating.
- Features true standard level gate drive characteristics with a threshold voltage greater than 1 V at 175 °C.
- Includes repetitive avalanche rating for enhanced ruggedness.
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component meets the required AEC-Q101 qualification standards for your target application. Cross-reference the datasheet revision date to ensure all electrical parameters align with your design specifications before finalizing procurement.
Selection Notes
Select this component when a robust N-channel MOSFET with low on-state resistance is required for automotive-grade power switching. The LFPAK56 package provides efficient thermal management for high-current applications. Ensure the gate drive circuitry can support the standard level gate requirements while maintaining reliable operation across the specified wide temperature range.
Part Context
This part belongs to Nexperia's BUK7Y series of N-channel TrenchMOS MOSFETs designed for automotive use. The 'E' suffix typically denotes the tape and reel packaging format. The device is manufactured using silicon technology and is intended for surface-mount assembly. It serves as a replacement or upgrade option for legacy components requiring similar voltage and current ratings with improved thermal performance.
Replacement Considerations
Check pinout compatibility with existing designs, specifically the source-drain configuration in the LFPAK56 package. Verify that the replacement device meets the same AEC-Q101 qualification level. Ensure the thermal resistance and power dissipation capabilities are sufficient for the intended heat sink or PCB layout constraints.
