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Product Detailed Parameters
- Description：MOSFET N-CH 80V 12.3A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：12.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：98mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：498 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：37W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y98-80EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 80 V and a maximum on-state resistance of 98 mΩ at 25 °C. The device supports a continuous drain current of 12.3 A at a mounting base temperature of 25 °C, with a total power dissipation rating of 37 W under the same conditions. It operates within a junction temperature range of -55 °C to +175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with AEC-Q101 automotive standards for high-performance applications
- Features true standard level gate operation with threshold voltage greater than 1 V at 175 °C
- Suitable for thermally demanding environments due to 175 °C junction temperature rating
- Repetitive avalanche rated for robust performance
Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific suffix 'EX' against the official Nexperia ordering information table to confirm packaging details, as datasheets primarily reference the base part number BUK7Y98-80E. Ensure the component meets RoHS compliance requirements by checking the latest restricted substances declaration. Confirm that the LFPAK56 package dimensions align with your PCB footprint specifications before finalizing procurement.
Selection Notes
Select this component for automotive circuits requiring standard level gate drive compatibility. The 98 mΩ RDS(on) provides efficient conduction for moderate current loads up to 12.3 A. Consider the thermal resistance of 4.03 K/W from junction to mounting base when designing heat dissipation strategies. Verify that the gate charge characteristics meet the switching frequency requirements of the target application.
Part Context
This N-channel enhancement mode field-effect transistor belongs to Nexperia's High-Performance Automotive (HPA) TrenchMOS family. It is designed specifically for critical automotive applications where reliability and thermal stability are paramount. The device integrates advanced trench technology to achieve low on-resistance while maintaining robust avalanche ruggedness suitable for harsh electrical environments.
Replacement Considerations
Consult the Nexperia product selector tool for direct replacements with equivalent voltage, current, and package specifications. Cross-reference alternative LFPAK56 packaged MOSFETs ensuring matching RDS(on) and gate threshold voltage parameters. Verify that any substitute component also holds AEC-Q101 qualification if required for the specific automotive application context.
