BUK7Y9R9-80EX

BUK7Y9R9-80EX

$1.38
  • Description:MOSFET N-CH 80V 89A LFPAK56
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:5e6baaee6721 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 80V 89A LFPAK56
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:9.9mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:51.6 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4266 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):195W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK56, Power-SO8
  • Package / Case:SC-100, SOT-669

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BUK7Y9R9-80EX

Overview

The BUK7Y9R9-80EX is a standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. Designed for high performance automotive applications, it complies with the AEC-Q101 standard. Key electrical parameters include a drain-source voltage of 80 V and a continuous drain current of 89 A at a mounting base temperature of 25 °C. The device features a maximum on-state resistance of 9.9 mΩ at 25 °C and supports junction temperatures up to 175 °C.

Feature Summary

  • Compliant with AEC-Q101 standards for automotive reliability
  • Rated for repetitive avalanche energy operation
  • Suitable for thermally demanding environments with a 175 °C rating
  • Features true standard level gate drive capability

Applications

  • 12 V, 24 V and 48 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific suffix 'EX' against the official Nexperia datasheet to confirm packaging details such as reel size or tape type. Ensure the component meets the required AEC-Q101 qualification status for your specific automotive application environment before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring robust automotive-grade N-channel switching with low conduction losses. The LFPAK56 package offers efficient thermal dissipation suitable for high-current applications. Verify that the gate drive circuitry aligns with the standard level threshold requirements across the full operating temperature range.

Part Context

This part belongs to the Nexperia BUK7Y series of N-channel TrenchMOS power MOSFETs. These devices are engineered for high-performance automotive electronics, combining low on-resistance with high current handling capabilities in a compact surface-mount package designed for reliable operation under harsh conditions.

Replacement Considerations

Consult the official Nexperia replacement guide for verified substitutes. Cross-reference pinout compatibility and thermal characteristics when considering alternative packages within the same voltage and current ratings.

FAQ

Is the BUK7Y9R9-80EX rated for repetitive avalanche operations?

Yes, the datasheet explicitly states that the device is repetitive avalanche rated.

What is the maximum junction temperature for this MOSFET?

The maximum junction temperature (Tj) is 175 °C.

BUK7Y9R9-80EXBUK7Y9R9-80EX
$1.38
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