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The BUK7Y9R9-80EX is a standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. Designed for high performance automotive applications, it complies with the AEC-Q101 standard. Key electrical parameters include a drain-source voltage of 80 V and a continuous drain current of 89 A at a mounting base temperature of 25 °C. The device features a maximum on-state resistance of 9.9 mΩ at 25 °C and supports junction temperatures up to 175 °C.
Verify the specific suffix 'EX' against the official Nexperia datasheet to confirm packaging details such as reel size or tape type. Ensure the component meets the required AEC-Q101 qualification status for your specific automotive application environment before finalizing procurement decisions.
Select this component for designs requiring robust automotive-grade N-channel switching with low conduction losses. The LFPAK56 package offers efficient thermal dissipation suitable for high-current applications. Verify that the gate drive circuitry aligns with the standard level threshold requirements across the full operating temperature range.
This part belongs to the Nexperia BUK7Y series of N-channel TrenchMOS power MOSFETs. These devices are engineered for high-performance automotive electronics, combining low on-resistance with high current handling capabilities in a compact surface-mount package designed for reliable operation under harsh conditions.
Consult the official Nexperia replacement guide for verified substitutes. Cross-reference pinout compatibility and thermal characteristics when considering alternative packages within the same voltage and current ratings.
Yes, the datasheet explicitly states that the device is repetitive avalanche rated.
The maximum junction temperature (Tj) is 175 °C.