BUK9209-40B,118

$1.36

Description：MOSFET N-CH 40V 75A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:638561f7eb44 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 75A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：3619 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：167W (Tc)
Operating Temperature：-55°C ~ 185°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK9209-40B,118

Overview

The BUK9209-40B,118 is an N-channel TrenchMOS logic level FET in a DPAK (SOT428) package. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device has a maximum power dissipation of 167 W. Key electrical parameters include a typical RDSon of 6.27 mΩ at VGS=10V and 7.69 mΩ at VGS=5V. It supports junction temperatures up to 185 °C and meets AEC-Q101 automotive standards.

Feature Summary

Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Qualified for thermally demanding environments with 185 °C rating

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for applications requiring high current handling in a compact surface-mount package. Ensure the gate drive voltage aligns with the logic level specifications to achieve optimal on-resistance. Consider the thermal management requirements given the 167 W power dissipation capability and the need to maintain the mounting base temperature within safe operating limits.

Part Context

This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology to reduce cell pitch and improve power density. The DPAK package provides a robust mechanical solution with a mounting base connected to the drain for efficient heat dissipation. It is designed for reliability in automotive and industrial environments.

Replacement Considerations

Check datasheets for alternative N-channel MOSFETs with similar VDS, ID, and RDSon values in the DPAK package. Verify pinout compatibility and thermal resistance characteristics before substitution.