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The BUK9214-30A is a logic level N-channel enhancement mode Field-Effect Transistor manufactured using TrenchMOS technology. It features a drain-source voltage of 30 V and a continuous drain current of 63 A at a mounting base temperature of 25 °C. The device exhibits low on-state resistance, measuring 15.5 mΩ maximum at VGS = 4.5 V and ID = 25 A. Total power dissipation reaches 107 W under specified conditions. The component supports junction temperatures up to 175 °C and includes non-repetitive avalanche energy capability of 230 mJ.
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Confirm product status as active or obsolete through authorized distributors before finalizing procurement plans. Ensure compliance with RoHS directives and export control regulations applicable to your region.
Select this component for designs requiring robust automotive-grade performance with high current handling capabilities. The logic level gate drive compatibility simplifies interface requirements with standard microcontrollers. Evaluate thermal management strategies carefully given the high power dissipation ratings and operating temperature limits.
This part belongs to the BUK9214 series of N-channel TrenchMOS logic level FETs from Nexperia. These devices are engineered for high-performance switching applications where low conduction losses and ruggedness are critical. The DPAK (SOT428) package provides efficient thermal transfer to the PCB copper area.
BUK9214-30A,118