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Product Detailed Parameters
- Description：MOSFET N-CH 55V 11A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：125mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：338 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK92150-55A,118 is an N-channel TrenchMOS logic level FET designed for automotive critical applications. It features a 55 V drain-source voltage (VDS) and supports a continuous drain current (ID) of 11 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance (RDSon) of 125 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 36 W under specified conditions. The component operates within a junction temperature range of -55 °C to +175 °C and utilizes a DPAK (SOT428) surface-mount package.
Feature Summary
- Logic level gate drive compatibility enables direct interfacing with standard logic sources.
- TrenchMOS technology provides low conduction losses through minimized on-state resistance.
- Qualified to AEC-Q101 standards for reliability in demanding automotive environments.
- High thermal capability supports operation in thermally challenging conditions up to 175 °C.
Applications
- 12 V and 24 V load switching
- Automotive power management circuits
- General purpose power switching
- Motor control applications
- Lamp and solenoid driving
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with logic-level gate drive capabilities. Ensure the application demands a 55 V breakdown voltage and can accommodate the thermal characteristics of the DPAK package. Verify that the required continuous or peak drain currents align with the device's safe operating area limits defined in the datasheet.
Part Context
This part belongs to Nexperia's BUK9 series of N-channel MOSFETs utilizing TrenchMOS technology. The series is engineered for high-efficiency power switching in automotive and industrial sectors. The BUK92150-55A specifically targets applications needing low RDSon and high thermal stability within a compact surface-mount footprint.
Replacement Considerations
Check for BUK92150-55A/CD as a potential variant with identical electrical specifications but potentially different packaging or marking codes. Confirm pinout compatibility and thermal resistance values before substitution.
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The device can withstand a non-repetitive drain-source avalanche energy of 16 mJ under specified test conditions (ID = 11 A, Vsup ≤ 55 V).
How does the on-state resistance vary with temperature?
The RDSon increases significantly at higher temperatures; it rises from a typical 120 mΩ at 25 °C to approximately 280 mΩ at 175 °C junction temperature.
