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Product Detailed Parameters
- Description：MOSFET N-CH 55V 48A DPAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：2210 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：103W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9222-55A/C1,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a DPAK (SOT428) plastic package. Designed for automotive critical applications, it complies with AEC Q101 standards and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 55 V, a continuous drain current of 48 A at 25 °C mounting base temperature, and a total power dissipation of 103 W. The device exhibits low on-state resistance, typically 24 mΩ at VGS = 4.5 V and ID = 25 A, ensuring efficient switching performance.
Feature Summary
- Logic level gate drive compatibility for direct interfacing with standard control sources
- Automotive qualification compliant with AEC Q101 standards for reliability
- High thermal capability supporting operation in demanding environments up to 175 °C
Applications
- 12 V and 24 V load switching
- Automotive power management circuits
- General purpose power switching
- Motor, lamp, and solenoid control
Procurement Notes
Verify the specific ordering suffix /C1,118 against official Nexperia documentation to confirm exact packaging and reel specifications. Ensure the component meets the required AEC Q101 grade for your target application. Cross-reference the datasheet revision date to confirm the validity of the electrical characteristics provided.
Selection Notes
Select this component when a robust N-channel MOSFET with low conduction losses is required for automotive or industrial environments. The logic level gate threshold simplifies driver design, while the high thermal rating allows for reliable operation under significant heat stress without derating.
Part Context
This part belongs to the BUK9222 series of N-channel TrenchMOS logic level FETs manufactured by Nexperia. The series is engineered for high-efficiency power switching applications where low on-resistance and automotive-grade reliability are critical requirements.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements from other manufacturers meet the specific AEC Q101 qualification or thermal characteristics of this part.
