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Product Detailed Parameters
- Description：MOSFET N-CH 55V 48A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：2210 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：103W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9222-55A,127 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 48 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, ranging from 17 mΩ to 24 mΩ depending on gate drive conditions. Total power dissipation reaches 103 W at 25 °C. Qualified for automotive applications under AEC-Q101 standards, it supports junction temperatures up to 175 °C.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards
- Optimized for logic level gate drive sources
- Low conduction losses resulting from minimal on-state resistance
- Rated for operation in thermally demanding environments up to 175 °C
Applications
- 12 V and 24 V load switching
- Automotive and general purpose power switching circuits
- Control of motors, lamps, and solenoids
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm tape-and-reel packaging specifications. Confirm that the component meets the required AEC-Q101 reliability standards for the intended automotive application environment before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring high current handling with logic-level compatibility. Ensure the thermal management solution accommodates the specified power dissipation limits. Verify that the gate drive voltage aligns with the low threshold requirements to maximize efficiency and minimize conduction losses during operation.
Part Context
This device belongs to the Nexperia BUK92 series of N-channel TrenchMOS logic level FETs. It is housed in a DPAK (SOT428) plastic surface-mounted package. The product line is engineered for robust performance in critical automotive systems, leveraging advanced trench technology to deliver high current capacity within a compact form factor suitable for PCB integration.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and electrical parameters such as RDS(on) and VDS when evaluating potential replacement components to ensure functional compatibility.
