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Product Detailed Parameters
- Description：MOSFET N-CH 60V DPAK
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：75A
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK9223-60EJ is an automotive-grade N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia USA Inc. utilizing TrenchMOS technology. It features a drain-source voltage (VDS) of 60 V and a maximum on-state resistance (RDSon) of 23 mΩ at VGS = 10 V. The device supports a continuous drain current (ID) of 36 A at 25 °C with a thermal resistance from junction to mounting base of 2.29 K/W. Qualified to AEC-Q101 standards, it operates within a temperature range of -55 °C to +175 °C TJ.
Feature Summary
- Automotive-grade reliability compliant with AEC-Q101 qualification standards for harsh environments.
- Advanced TrenchMOS silicon technology enabling low on-resistance and high switching efficiency.
- High-current transient robustness suitable for demanding automotive power switching applications.
Applications
- Engine management systems
- Transmission control actuators
- Body control modules
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Ensure compatibility with AEC-Q101 requirements for your target automotive application. Cross-reference the datasheet for exact thermal and electrical limits before finalizing procurement.
Selection Notes
Select this component for designs requiring a 60 V rating with moderate current handling in compact surface-mount packages. Evaluate the RDSon value against system efficiency targets and verify that the LFPAK33 footprint meets board space constraints. Confirm gate drive voltage compatibility with standard automotive logic levels.
Part Context
This part belongs to the BUK series of automotive power MOSFETs designed by Nexperia. The series utilizes TrenchMOS technology to deliver high performance in low-voltage applications. These devices are engineered specifically for the rigorous quality and reliability demands of modern vehicle electronics.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Do not assume pin-compatible replacements without verifying electrical parameters and package dimensions against the original datasheet.
