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Product Detailed Parameters
- Description：MOSFET N-CH 100V 47A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：3805 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：167W (Tc)
- Operating Temperature：-55°C ~ 185°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9230-100B is a logic level N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia using TrenchMOS technology. It is housed in a DPAK plastic package (SOT428). The device supports a drain-source voltage of 100 V and delivers a continuous drain current of 47 A at 25 °C mounting base temperature. Total power dissipation reaches 167 W under the same conditions. The on-state resistance is typically 24 mΩ at VGS = 10 V and 25 A, or 25 mΩ at VGS = 5 V and 25 A. It features an avalanche energy rating of 150 mJ and operates with junction temperatures up to 185 °C.
Feature Summary
- AEC Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments with a 185 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required configuration, as variations may exist within the product line. Confirm that the SOT428 package dimensions align with your PCB footprint requirements. Ensure design parameters remain within the absolute maximum ratings defined in the datasheet, particularly regarding junction temperature limits and thermal resistance values. Cross-reference the latest revision history to ensure compliance with current manufacturing standards.
Selection Notes
Select this component when high current handling and low on-resistance are required in automotive or general power switching environments. The logic level gate drive capability allows direct interfacing with standard control circuits without additional level shifting. Consider the 185 °C junction temperature rating for designs requiring operation in high-thermal-stress conditions. Verify that the DPAK package provides adequate thermal management for the intended power dissipation levels.
Part Context
This part belongs to Nexperia's TrenchMOS logic level FET family, designed for robust performance in automotive and industrial applications. The DPAK package offers a balance of electrical performance and thermal efficiency. The product is qualified to AEC-Q101 standards, ensuring reliability in critical automotive systems. It serves as a solution for efficient power switching in load management and motor control scenarios.
Replacement Considerations
Check pinout compatibility and package dimensions against existing designs. Verify that replacement devices meet or exceed the 100 V drain-source voltage and 47 A current requirements. Ensure the new component supports logic level gate drive if direct interface is maintained. Confirm thermal characteristics match the original design constraints.
