BUK9275-100A,118

$0.90

Description：MOSFET N-CH 100V 21.7A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:48c8b720c84b Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 21.7A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：21.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：72mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1690 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：88W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK9275-100A,118

Overview

The BUK9275-100A is an N-channel TrenchMOS logic level enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes silicon technology and is housed in a DPAK plastic surface-mounted package (SOT428). The device features a drain-source voltage rating of 100 V and a continuous drain current capability of 21.7 A at a mounting base temperature of 25 °C with a gate-source voltage of 5 V. The maximum total power dissipation is 88 W under the same thermal conditions. The on-state resistance varies between 62 mΩ and 84 mΩ depending on the specific gate drive voltage and test conditions.

Feature Summary

Compliant with AEC-Q101 standards for automotive critical applications
Optimized for low conduction losses through minimized on-state resistance
Capable of operation with logic level gate drive sources
Designed for thermally demanding environments with a 175 °C junction temperature rating

Applications

Switching 12 V loads
Switching 24 V loads
Switching 42 V loads
Automotive power switching circuits
General purpose power switching

Procurement Notes

Verify the component authenticity against official Nexperia documentation before integration. Confirm that the ordering suffix matches the required packaging configuration. Ensure the design accounts for the absolute maximum ratings to prevent permanent damage. Cross-reference the specific revision history to ensure compatibility with current manufacturing standards.

Selection Notes

Select this component when a robust N-channel MOSFET is required for automotive or high-reliability general-purpose applications. The logic level gate drive capability simplifies control circuitry design. Consider the thermal resistance characteristics and safe operating area limits when designing for high-current or pulsed load scenarios to maintain reliability within specified temperature ranges.

Part Context

This part belongs to the BUK9275 series of N-channel TrenchMOS FETs from Nexperia. It is specifically engineered for automotive environments, meeting rigorous qualification standards. The DPAK package provides a balance of electrical performance and thermal management suitable for surface-mount assembly processes commonly used in modern electronic manufacturing.