BUK9277-55A,118

$0.71

Description：MOSFET N-CH 55V 18A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3050a6e52857 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 18A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：69mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：643 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：51W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK9277-55A,118

Overview

The BUK9277-55A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 18 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 69 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation reaches 51 W under specified conditions. The component supports junction temperatures up to 175 °C and includes an internal source-drain diode with a reverse recovery time of 33 ns.

Feature Summary

Qualified for automotive critical applications in compliance with Q101 standards.
Optimized for logic level gate drive sources requiring low threshold voltages.
Engineered for thermally demanding environments with a 175 °C operating rating.

Applications

12 V and 24 V load switching
Automotive power switching circuits
General purpose power switching
Motor control applications
Lamp and solenoid driving

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Confirm current product status as availability may change. Ensure compatibility with required thermal management solutions given the DPAK package constraints. Validate that the selected variant meets all necessary automotive qualification requirements for the intended deployment environment.

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with logic-level gate compatibility. Consider the 55 V breakdown voltage and 18 A current capacity for appropriate load handling. Evaluate thermal resistance characteristics to ensure adequate heat dissipation for the expected duty cycle. Verify that the gate charge parameters align with the driving circuit capabilities for optimal switching performance.

Part Context

This part belongs to the BUK9277 series of N-channel TrenchMOS logic level FETs manufactured by Nexperia. The series utilizes advanced trench technology to achieve low on-state resistance and high efficiency. These devices are specifically designed to meet the rigorous demands of automotive electronics while maintaining reliability in general-purpose power switching applications.