BUK9506-40B,127

$0.54

Description：PFET, 75A I(D), 40V, 0.0071OHM,
Series：*
Mfr：Nexperia USA Inc.
Package：Tube

SKU:d99ae92e301e Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：PFET, 75A I(D), 40V, 0.0071OHM,
Series：*
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Download product information

BUK9506-40B,127

Overview

The BUK9506-40B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 6.4 mΩ at VGS = 5 V and 12.2 mΩ at 175 °C. Total power dissipation reaches 203 W, with a junction-to-mounting base thermal resistance of 0.74 K/W. It supports a non-repetitive avalanche energy of 494 mJ and operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

AEC Q101 compliant for automotive critical applications
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Operates in thermally demanding environments up to 175 °C

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package and tape/reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target automotive application. Check for any recent product change notices regarding manufacturing site or material composition updates before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with logic-level gate compatibility. The TO-220AB package provides effective heat dissipation for high-current applications. Ensure the gate drive voltage aligns with the specified threshold characteristics to minimize on-state resistance. Evaluate thermal management requirements based on the specified junction-to-ambient resistance values.

Part Context

This part belongs to the BUK95 series of N-channel TrenchMOS logic level FETs manufactured by Nexperia (formerly NXP Semiconductors). The series is designed for high-efficiency power switching in automotive and industrial environments. The TO-220AB plastic package allows for direct heatsink mounting, facilitating thermal performance in power-dense designs.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and electrical parameters such as RDS(on) and VDS to ensure functional compatibility without redesigning the PCB layout or gate drive circuitry.