BUK9506-75B,127

Description：MOSFET N-CH 75V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:85be11e96878 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：11693 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK9506-75B,127

Overview

The BUK9506-75B,127 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 75 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device supports a total power dissipation of 300 W. On-state resistance ranges from 4.7 mΩ to 6.1 mΩ depending on gate drive conditions. It includes non-repetitive avalanche energy capability of 852 mJ and operates with junction temperatures up to 175 °C.

Feature Summary

AEC Q101 compliant for automotive critical applications
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Operates in thermally demanding environments with a 175 °C rating

Applications

12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring high current handling capabilities within a TO-220AB package. Ensure the gate drive voltage meets the logic level requirements for optimal on-state resistance performance. Consider thermal management strategies given the 300 W power dissipation rating and the necessity of mounting base cooling to maintain safe operating temperatures under load.

Part Context

This part belongs to Nexperia's TrenchMOS family, designed for robust performance in power switching applications. The BUK9506-75B specifically targets automotive and industrial sectors where reliability under high stress and thermal cycling is critical. Its construction allows for efficient heat transfer through the mounting base, supporting high-power density designs.

Replacement Considerations

Check datasheets for alternative N-channel MOSFETs with similar 75 V ratings and comparable RDS(on) values. Verify pinout compatibility with the TO-220AB package if direct replacement is required. Ensure any substitute also meets AEC-Q101 standards if used in automotive contexts.