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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：5280 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：203W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK9508-55B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 6.27 mΩ at VGS=10V and 7.1 mΩ at VGS=5V. It supports a total power dissipation of 203 W and operates with junction temperatures up to 175 °C.
Feature Summary
- Low conduction losses due to low on-state resistance
- Q101 compliant for automotive critical applications
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments due to 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package configuration. Confirm the component status against the manufacturer's latest product availability data, as production lifecycles may change. Ensure the datasheet revision aligns with design requirements before finalizing procurement specifications.
Selection Notes
Select this component for high-current switching applications requiring logic-level gate compatibility. Verify thermal management capabilities match the mounting base temperature conditions specified in the datasheet. Consider the TO-220AB package constraints when designing heat dissipation solutions for continuous operation.
Part Context
This part belongs to the Nexperia BUK95 series of N-channel TrenchMOS logic level FETs. These devices are designed for robust performance in automotive and industrial environments. The series utilizes advanced trench gate technology to achieve low on-resistance and efficient switching characteristics suitable for power control applications.
Replacement Considerations
Consult the official Nexperia replacement guide or contact technical support for verified substitute part numbers. Do not assume cross-compatibility based solely on pinout or voltage ratings without verifying electrical parameters and package dimensions.
