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Product Detailed Parameters
- Description：PFET, 75A I(D), 40V, 0.01OHM, 1-
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK9509-40B,127 is an N-channel TrenchMOS logic level FET manufactured by Nexperia USA Inc. It features a TO-220AB (SOT78) plastic package with a heatsink-mounted design. The device supports a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. Total power dissipation reaches 157 W under the same conditions. Static characteristics include a maximum on-state resistance of 6.27 mΩ at VGS=10V and 7.69 mΩ at VGS=5V, both measured at ID=25A and Tj=25°C. The component operates within a junction temperature range of -55 °C to 175 °C.
Feature Summary
- Logic level gate drive compatibility for direct interface with standard control sources
- Automotive qualification compliant with AEC-Q101 standards for critical applications
- High thermal endurance suitable for demanding environments with a 175 °C rating
- Low conduction losses achieved through optimized TrenchMOS technology
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring high current handling in a single-ended TO-220AB package. Ensure the application utilizes logic level gate drivers capable of providing sufficient voltage to minimize on-state resistance. Verify that the thermal management solution can maintain the mounting base temperature within limits to sustain the specified 75 A continuous current rating without exceeding the total power dissipation constraints.
Part Context
This part belongs to the Nexperia BUK95 series of N-channel enhancement mode Field-Effect Transistors. These devices utilize TrenchMOS technology to deliver low on-state resistance and robust performance. The series is specifically engineered for automotive and industrial markets, offering reliability under high thermal stress and frequent switching operations typical in modern power electronics designs.
Replacement Considerations
Consult official Nexperia documentation for verified substitutes. Cross-reference pinout configurations and thermal resistance values when evaluating alternative packages.
