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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：4633 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：211W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK9509-55A,127 is an N-channel enhancement mode power transistor utilizing TrenchMOS technology in a SOT78 (TO-220AB) plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 108 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 7.6 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 211 W under standard conditions, with a junction temperature rating up to 175 °C.
Feature Summary
- TrenchMOS technology for low on-state resistance
- Logic level gate compatibility
- Q101 compliant automotive qualification
- Rated for 175 °C junction temperature
Applications
- 12 V load switching
- 24 V load switching
- Motor control circuits
- Lamp driving applications
- Solenoid actuation
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component source aligns with the original Philips Semiconductors documentation provided. Ensure the revision history indicates production status rather than preliminary or objective data. Cross-reference the datasheet date against current manufacturing updates to confirm availability and specification stability before finalizing procurement orders.
Selection Notes
Select this component for high-current switching applications requiring logic-level drive compatibility. The TO-220AB package supports robust thermal management for power dissipation up to 211 W. Verify that the 55 V breakdown voltage meets circuit requirements. Consider the 175 °C junction rating for high-temperature environments. Ensure gate drive voltages remain within the specified limits for optimal RDSon performance.
Part Context
This part belongs to the BUK95/9609 series of TrenchMOS logic level FETs. The BUK9509-55A specifically utilizes the SOT78 (TO-220AB) through-hole package, while the sibling part BUK9609-55A uses the SOT404 (D2-PAK) surface-mount package. Both variants share identical electrical characteristics and are designed for automotive and general-purpose power switching duties.
Replacement Considerations
BUK9609-55A,127 offers identical electrical specifications but utilizes the SOT404 (D2-PAK) surface-mount package instead of the SOT78 (TO-220AB). Pinout configurations differ between the two packages; verify mechanical fit and soldering requirements when substituting.
