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Product Detailed Parameters
- Description：MOSFET N-CH 100V 75A TO220AB
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BUK9510-100B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. It features a drain-source voltage of 100 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 8.3 mΩ at VGS=10V and 10 mΩ at VGS=5V. Total power dissipation reaches 300 W with a junction-to-mounting base thermal resistance of 0.5 K/W. It supports a peak drain current of 438 A and operates within a junction temperature range of -55 °C to 175 °C.
Feature Summary
- AEC Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with current production requirements, as datasheet revisions may impact specifications. Ensure compatibility with existing thermal management designs given the TO-220AB form factor. Cross-reference the latest Nexperia documentation for any updates to electrical characteristics or pin configurations before finalizing procurement.
Selection Notes
Select this component for high-current switching applications requiring logic-level gate compatibility. The TO-220AB package facilitates direct heatsink mounting for effective thermal dissipation. Consider the 175 °C junction temperature rating for robust performance in elevated ambient conditions. Verify that the gate drive voltage meets the threshold requirements for optimal on-state resistance minimization during operation.
Part Context
This part belongs to the Nexperia (formerly NXP) TrenchMOS logic level FET portfolio. It is designed for automotive and industrial markets where reliability under harsh conditions is essential. The TO-220AB package provides a balance between high power handling capabilities and ease of integration into standard through-hole mounting systems for power electronics designs.
Replacement Considerations
BUK9510-100B
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The non-repetitive drain-source avalanche energy is 629 mJ when ID is 75 A, Vsup is less than or equal to 100 V, RGS is 50 Ω, VGS is 5 V, and the initial junction temperature is 25 °C.
How does the gate-source threshold voltage vary with temperature?
The gate-source threshold voltage decreases as temperature increases. At 25 °C, it ranges from 1.1 V to 2 V, while at 175 °C, the minimum value drops to 0.5 V.
