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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：4.307 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK9510-55A,127 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications and AEC Q101 compliance, it supports a drain-source voltage of 55 V and continuous drain current up to 75 A at 25 °C. The device features low on-state resistance of 11 mΩ at VGS=4.5V and total power dissipation of 200 W. It operates with junction temperatures up to 175 °C and includes non-repetitive avalanche energy capability of 333 mJ.
Feature Summary
- Logic level gate drive compatibility
- Automotive qualification compliant
- High thermal stability rating
Applications
- 12 V and 24 V load switching
- Automotive power switching circuits
- Motor control systems
- Lamp and solenoid drivers
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm the component status against the latest manufacturer documentation as product availability may change. Ensure the procurement channel provides valid traceability records for automotive grade components. Cross-reference the datasheet revision date with design requirements to ensure parameter consistency.
Selection Notes
Select this component for designs requiring robust logic-level switching in high-current environments. The TO-220AB package facilitates heatsink mounting for effective thermal management. Verify that the application voltage remains within the 55 V limit and that peak currents do not exceed the pulsed ratings defined in the safe operating area curves.
Part Context
This part belongs to the BUK95 series of N-channel MOSFETs from Nexperia (formerly NXP Semiconductors). It utilizes TrenchMOS technology to achieve low conduction losses. The device is specifically engineered for automotive applications, meeting rigorous reliability standards while maintaining performance in thermally demanding conditions.
Replacement Considerations
Direct substitutes include other AEC-Q101 qualified 55 V logic level N-channel MOSFETs in TO-220AB packages with comparable RDS(on) and ID ratings. Verify pinout compatibility and thermal resistance characteristics before substitution.
