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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：31 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：3693 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：157W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK9512-55B is an N-channel TrenchMOS logic level FET in a TO-220AB plastic package (SOT78). It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The typical on-state resistance is 9 mΩ at VGS=10V and 10.2 mΩ at VGS=5V, both measured at ID=25A and 25 °C. Total power dissipation reaches 157 W at 25 °C. The device supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy ratings of 172 mJ.
Feature Summary
- Low conduction losses due to low on-state resistance
- Q101 compliant for automotive critical applications
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant, as the datasheet identifies the standard type number BUK9512-55B with the SOT78/TO-220AB package. Confirm that the component status remains active, noting the document revision date of June 2010. Ensure compatibility with the intended thermal management solution, given the high power dissipation capabilities and mounting base requirements specified in the limiting values section.
Selection Notes
Select this component for designs requiring robust automotive-grade N-channel MOSFETs capable of handling high currents in TO-220AB packages. The logic level gate drive capability allows direct interfacing with standard microcontrollers or drivers without additional level shifting circuitry. Consider the thermal resistance characteristics when designing heatsinking solutions to maintain junction temperatures within the specified operating range under continuous load conditions.
Part Context
This part belongs to Nexperia's (formerly NXP Semiconductors) BUK9Y/BUK95 series of TrenchMOS logic level FETs. These devices utilize advanced trench technology to achieve low on-resistance and high switching performance. The series is specifically qualified for automotive applications, meeting AEC-Q101 standards for reliability and durability in harsh vehicle environments.
Replacement Considerations
BUK9Y12-55B
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The maximum non-repetitive drain-source avalanche energy is 172 mJ, measured at ID=75A, Vsup≤55V, RGS=50Ω, VGS=5V, and initial junction temperature of 25°C.
How does the on-state resistance vary with gate-source voltage?
At ID=25A and Tj=25°C, the typical RDSon is 9 mΩ at VGS=10V and 10.2 mΩ at VGS=5V. At elevated temperatures (Tj=175°C), it increases to approximately 24 mΩ at VGS=5V.
