BUK9516-75B,127

$0.60

Description：PFET, 67A I(D), 75V, 0.018OHM, 1
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:7116a4a68d30 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：PFET, 67A I(D), 75V, 0.018OHM, 1
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：4.034 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：157W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK9516-75B,127

Overview

The BUK9516-75B,127 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. It features a drain-source voltage of 75 V and a continuous drain current of 67 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, with maximum values of 14 mΩ at VGS=10V and 16.4 mΩ at VGS=5V (both at ID=25A, Tj=25°C). Total power dissipation reaches 157 W at 25 °C. It is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

Compliant with AEC-Q101 automotive qualification standards
Low conduction losses enabled by low on-state resistance
Compatible with logic level gate drive sources
Operates in thermally demanding environments up to 175 °C junction temperature

Applications

12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify component authenticity through authorized Nexperia distributors or official channels. Confirm the specific ordering suffix matches requirements. Check current product status as availability may vary. Ensure compliance with RoHS directives and relevant export control regulations before procurement.

Selection Notes

Select this component for high-current automotive applications requiring logic-level gate compatibility. Evaluate thermal management needs given the 157 W dissipation rating. Verify that the 75 V breakdown voltage suits the circuit's peak drain-source voltage requirements. Consider the TO-220AB package for heatsink mounting capabilities.

Part Context

This part belongs to the Nexperia BUK95 series of N-channel TrenchMOS logic level FETs. These devices are designed for robust performance in automotive critical applications. The TO-220AB package provides efficient thermal transfer to external heatsinks, supporting high-power switching operations in demanding electrical environments.