BUK9518-55A,127

Overview

The BUK9518-55A,127 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 55 V and a continuous drain current of 61 A at a mounting base temperature of 25 °C. The device exhibits low on-state resistance, typically 14 mΩ at VGS = 5V and ID = 25 A. It supports a total power dissipation of 136 W and operates with junction temperatures up to 175 °C.

Feature Summary

• Compliant with AEC-Q101 standards for automotive critical applications
• Optimized for logic level gate drive sources
• Capable of operation in thermally demanding environments up to 175 °C
• Minimizes conduction losses through low on-state resistance

Applications

• 12 V and 24 V loads
• Automotive and general purpose power switching
• Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with logic-level compatibility. Ensure the thermal management strategy accounts for the 136 W dissipation rating at 25 °C mounting base temperature. Verify that the gate drive voltage aligns with the specified threshold characteristics for optimal RDSon performance under load conditions.

Part Context

This part belongs to the Nexperia BUK95 series of N-channel TrenchMOS logic level FETs. These devices are engineered for high-performance switching in automotive and industrial sectors. The TO-220AB package provides a heatsink-mounted configuration suitable for high-current applications where efficient thermal transfer to a mounting base is required.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.