ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 100V 11A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：173mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：619 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：54W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The BUK95180-100A is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It is housed in a TO-220AB plastic package (SOT78A) designed for heatsink mounting with one mounting hole. The device is qualified to AEC-Q101 standards for automotive critical applications. Key electrical parameters include a drain-source voltage of 100 V, a continuous drain current of 11 A at a mounting base temperature of 25 °C, and a total power dissipation of 54 W. The typical on-state resistance is 152 mΩ at VGS = 10 V and 165 mΩ at VGS = 5 V, both measured at ID = 5 A and Tj = 25 °C.
Feature Summary
- Logic-level compatible gate drive characteristics suitable for direct interfacing with standard logic outputs.
- Automotive qualification compliant with AEC-Q101 standards for use in critical automotive environments.
- Low conduction losses achieved through optimized TrenchMOS technology resulting in low on-state resistance.
Applications
- Automotive power switching circuits
- General purpose power switching
- Motor control systems
- Load switching for lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with current production requirements. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance. Check for any recent product change notices that may affect pinning or specifications. Validate compatibility with existing assembly processes for the TO-220AB package.
Selection Notes
Select this component when a robust N-channel MOSFET with logic-level gate drive is required for automotive or industrial applications. The TO-220AB package facilitates effective heat dissipation for moderate power levels. Consider the 100 V breakdown voltage and 11 A current rating against peak load demands. Evaluate the avalanche energy rating if unclamped inductive loads are present in the circuit design.
Part Context
This part belongs to Nexperia's portfolio of discrete, logic, and PowerMOS semiconductors. The company focuses on serving the automotive, industrial, computing, consumer, and wearable markets. The BUK95180 series utilizes TrenchMOS technology to deliver high performance and reliability in power switching applications.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations and thermal characteristics before substitution. Verify that alternative components meet the same AEC-Q101 qualification standards if used in automotive contexts.
