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Product Detailed Parameters
- Description：MOSFET N-CH 30V 120A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：1.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：113 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：16150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：349W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK951R6-30E,127 is an N-channel TrenchMOS logic level field-effect transistor manufactured by Nexperia. It features a dual configuration within an LFPAK-56D-8 (SOT1205) surface-mount package. The device supports a drain-source voltage of 30 V and delivers a continuous drain current of 40 A. Its on-state resistance is specified at 3.9 mΩ per channel. The component operates with a gate-source voltage range of ±10 V and includes enhancement mode functionality. Thermal performance allows for power dissipation up to 64 W, with an extended operating temperature range from -55 °C to +175 °C.
Feature Summary
- Dual N-channel architecture integrated into a single compact SMD package
- Logic-level gate drive capability for direct microcontroller interfacing
- Low on-state resistance optimized for high-efficiency power switching
- Enhanced thermal stability supporting operation up to 175 °C junction temperature
Applications
- High-side and low-side power switching in automotive systems
- DC-DC converter output stages requiring low conduction losses
- Motor control circuits utilizing logic-level gate signals
- General-purpose load switching in industrial equipment
Procurement Notes
Verify the specific ordering code suffix against manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status through official datasheets prior to integration. Ensure the LFPAK-56D-8 footprint matches PCB design requirements. Validate that the 30 V rating aligns with system voltage headroom needs. Check for any recent lifecycle notices regarding production availability.
Selection Notes
Select this component when a dual N-channel MOSFET with logic-level compatibility is required in a space-constrained application. The 3.9 mΩ on-resistance offers efficiency benefits over higher resistance alternatives. Consider the 40 A current capacity for moderate power loads. The wide temperature range suits harsh environments. Compare against similar Nexperia BUK9 series devices if different pinouts or resistance values are needed.
Part Context
This part belongs to the Nexperia BUK9 series of TrenchMOS logic level FETs. These devices utilize advanced trench technology to achieve low on-resistance and fast switching speeds. The series is designed for automotive and industrial applications requiring robust performance in compact packages. The LFPAK-56D-8 package provides superior thermal dissipation compared to standard SO packages.
Replacement Considerations
Direct substitutes include other Nexperia dual N-channel MOSFETs in the LFPAK-56D-8 package with comparable Rds(on) and Vds ratings. Verify pinout compatibility before substitution. Alternative packages may require schematic and PCB redesign. Consult Nexperia's selection guide for cross-reference data.
