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Product Detailed Parameters
- Description：MOSFET N-CH 100V 63A TO220AB
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BUK9520-100B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a 100 V drain-source voltage rating and supports continuous drain currents up to 63 A at 25 °C mounting base temperature, with peak pulsed current reaching 253 A. The device exhibits low on-state resistance, typically 16.4 mΩ at VGS=4.5V and ID=25A. Designed for thermally demanding environments, it operates with junction temperatures up to 175 °C and complies with AEC-Q101 standards for automotive critical applications.
Feature Summary
- Logic level gate drive compatibility enables direct interfacing with standard control sources.
- Low conduction losses achieved through optimized on-state resistance characteristics.
- Automotive qualification ensures reliability in critical system applications.
- High thermal endurance supports operation in demanding temperature environments.
Applications
- Switching 12 V, 24 V, and 42 V loads
- General purpose power switching in automotive systems
- Control of motors, lamps, and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with current production requirements. Ensure design specifications account for the absolute maximum ratings provided in the datasheet. Check for any recent product change notices regarding assembly sites or labeling updates before finalizing procurement plans.
Selection Notes
Select this component when logic level drive capability is required for high-current switching applications. The TO-220AB package facilitates heatsink mounting for effective thermal management. Consider the avalanche ruggedness and short-circuit capabilities when designing protection circuits. Verify that the gate charge parameters fit within the driving circuit's timing constraints.
Part Context
This part belongs to Nexperia's (formerly NXP) TrenchMOS family of N-channel MOSFETs. The series is engineered for robust performance in automotive and industrial sectors. The BUK9520-100B specifically targets applications requiring high current handling with efficient logic-level control. It represents a mature product line designed for durability under stress conditions.
Replacement Considerations
Direct substitutes include other N-channel logic level MOSFETs with comparable 100 V ratings and similar current capacities in TO-220 packages. Verify pinout compatibility and thermal resistance values when cross-referencing with alternative manufacturers' components.
