BUK9520-55A,127

$0.47

Description：MOSFET N-CH 55V 54A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:a305d2bba588 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 54A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：2.21 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：118W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK9520-55A,127

Overview

The BUK9520-55A is an N-channel TrenchMOS logic level FET designed for automotive and general-purpose applications. It features a drain-source voltage of 55 V, a continuous drain current of 54 A at 25 °C mounting base temperature, and a total power dissipation of 118 W. The device exhibits low on-state resistance, ranging from 15 mΩ to 21 mΩ depending on gate drive conditions. It supports junction temperatures up to 175 °C and includes non-repetitive avalanche energy capability of 115 mJ.

Feature Summary

Logic level gate drive compatibility
High thermal stability with 175 °C rating
Low conduction losses via low on-state resistance
Automotive qualification compliant

Applications

12 V and 24 V loads
Automotive power switching
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Confirm current product status as automotive-grade components may undergo lifecycle changes. Ensure the supplier provides valid traceability documents matching the SOT78 package outline. Cross-reference the manufacturer part number with authorized distributor lists to avoid counterfeit components.

Selection Notes

Select this component when low on-state resistance is critical for efficiency in logic-level driven circuits. The TO-220AB package facilitates heatsink mounting for high-power dissipation requirements. Verify that the application operates within the 55 V drain-source voltage limit and does not exceed the 54 A continuous current rating under expected thermal conditions.

Part Context

This device belongs to the BUK95 series of N-channel TrenchMOS logic level FETs manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology to achieve enhanced performance in plastic packages. The product line is specifically engineered for robust operation in thermally demanding environments common in automotive systems.