BUK954R4-80E,127

Overview

The BUK954R4-80E is an N-channel TrenchMOS logic level FET designed for high-performance automotive applications. It operates with a drain-source voltage of 80 V and supports a continuous drain current of 120 A at a mounting base temperature of 25 °C. The device features a maximum total power dissipation of 349 W under the same conditions. Static characteristics include a typical drain-source on-state resistance of 3.6 mΩ at VGS = 5 V and ID = 25 A. Dynamic parameters specify a gate-drain charge of 37.5 nC and a total gate charge of 123 nC.

Feature Summary

• Compliant with AEC Q101 standards for automotive reliability.
• Rated for repetitive avalanche operation to handle inductive load switching.
• Capable of operating in thermally demanding environments up to 175 °C junction temperature.
• Features true logic level gate control with a threshold voltage greater than 0.5 V at elevated temperatures.

Applications

• 12V, 24V and 48V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the manufacturer status carefully, as the original NXP Standard Product business transitioned to Nexperia in February 2017. Ensure that documentation references align with the current corporate entity. Confirm that the specific ordering suffix matches the required package version. Cross-reference the latest product data sheet to confirm current production status and any potential specification updates since the initial release date.

Selection Notes

Select this component when designing circuits requiring robust N-channel MOSFETs for automotive power management. The low on-state resistance minimizes conduction losses in high-current paths. The logic level gate drive simplifies interface requirements with standard microcontrollers or drivers. Ensure thermal management strategies account for the specified junction-to-mounting base thermal resistance to maintain safe operating temperatures during peak loads.

Part Context

This device belongs to the TrenchMOS family of power field-effect transistors. It utilizes advanced trench gate technology to achieve low specific on-resistance. The TO-220AB plastic single-ended package provides efficient heat dissipation through a dedicated mounting base. This form factor is commonly used in industrial and automotive modules where through-hole mounting and heatsink integration are required.

Replacement Considerations

Public confirmed substitute part numbers: None identified in source material.